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portada Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition
Type
Physical Book
Publisher
Author
Language
English
Pages
643
Format
Hardcover
ISBN13
9781482254358
Edition No.
2

Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition

John E. Ayers Tedi Kujofsa Paul Rago Johanna Raphael (Author) · Crc Press · Hardcover

Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition - John E. Ayers Tedi Kujofsa Paul Rago Johanna Raphael

New Book Imported to South Africa
Delivery: 10 Jul - 04 Aug Shipping: 4 to 5 business days.
R 8,026
R 8,026

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Synopsis "Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition"

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

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