Name: amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11,
Price: 1788.00 ZAR
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Author: Harris, Gary L. ; Yang, Cary Y. -W
ISBN: 9783642934087

portada amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11,

amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11,

Type

Physical Book

Illustrated by

Gary L. Harris

Cary Y. -W Yang

Publisher

Springer

Author

Harris, Gary L. ; Yang, Cary Y. -W

Year

2012

Language

English

Pages

199

Format

Paperback

Dimensions

24.4 x 17.0 x 1.2 cm

Weight

0.35 kg.

ISBN

3642934080

ISBN13

9783642934087

Synopsis "amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11,"

Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.