Tracked shipping to South Africa with premium packaging for just R199 

Ship to
South Africa
0

My Account

  • argentina
  • chile
  • colombia
  • españa
  • méxico
  • perú
  • estados unidos
  • internacional

menu

Select your country

Americas

Europe

Rest of the world

Take advantage of this pre-sale
portada Gallium Nitride-Based Materials and Chips Epitaxially Grown on a Silicon Substrate
Type
Physical Book
Publisher
Author
Language
English
Pages
300
Format
Paperback
ISBN13
9780443526374

Gallium Nitride-Based Materials and Chips Epitaxially Grown on a Silicon Substrate

Guoqiang Li Phd (Author) · Elsevier · Paperback

Gallium Nitride-Based Materials and Chips Epitaxially Grown on a Silicon Substrate - Guoqiang Li Phd

New Book Imported to South Africa
Delivery: 23 Nov - 07 Dec Shipping: 67 to 71 business days.
R 3,786
R 3,786

Choose the list to add your product or create one New List

Go to My Wishlists
Calculate shipping cost

Synopsis "Gallium Nitride-Based Materials and Chips Epitaxially Grown on a Silicon Substrate"

Gallium nitride (GaN) is a wide bandgap semiconductor with significant applications in optoelectronic and high-power electronic devices. The epitaxial growth of GaN on silicon (Si) substrates is of great interest due to the low cost, large wafer size, good thermal conductivity, and compatibility with established Si device technology. Gallium Nitride-Based Materials and Chips Epitaxially Grown on a Silicon Substrate reviews research on developing high-performance semiconductor materials and chips using gallium nitride-based materials. In particular the book, firstly, describes a novel, two-step growth method that combines low-temperature epitaxy by pulsed laser deposition (PLD) with high-temperature epitaxy by metal-organic chemical vapor deposition (MOCVD)/molecular beam epitaxy (MBE). This method effectively controls the stress of Si-based GaN epitaxial materials and significantly reduces the defect density of the epitaxial materials by three orders of magnitude. Secondly, in terms of chip structure design, the book describes a variety of Si-based GaN chips with novel heteroepitaxial structures, leading to the improved the efficiency of various chips such as light-emitting diode (LED) chips, high-electron-mobility transistors, Schottky diodes, photodetector chips, photoelectrochemical water-splitting chips, and Si-based GaN integrated chips. Finally, the book describes novel chip fabrication processes which greatly improve the performance and production efficiency of various chips by more than 30%.

Customers reviews

More customer reviews
  • 0% (0)
  • 0% (0)
  • 0% (0)
  • 0% (0)
  • 0% (0)

Frequently Asked Questions about the Book

Is the book original?

All books in our catalog are Original.

In what language is the book written?

The book is written in English.

What is the format of this book?

The binding of this edition is Paperback.

Questions and Answers about the Book

Do you have a question about the book? Login to be able to add your own question.

Opinions about Bookdelivery

More customer reviews